OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORSHOEFFLINGER B.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 971-976; BIBL. 13 REF.Article

SHORT-CHANNEL MOSFET V_T-V_DS CHARACTERISTICS MODEL BASED ON A POINT CHARGE AND ITS MIRROR IMAGESOHNO Y.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 211-216; BIBL. 11 REF.Article

A MODEL OF IMPACT IONIZATION THROUGH SURFACE STATESHAMASAKI M; TAIRA K.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6224-6226; BIBL. 6 REF.Article

INVESTIGATION OF PARAMETER SENSITIVITY OF SHORT CHANNEL MOSFETSSELBERHERR S; SCHUETZ A; POETZL H et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 85-90; BIBL. 7 REF.Article

V-SHAPED NOTCHED-CHANNEL FIELD-EFFECT TRANSISTOR.MOK TD; SALAMA CAT.1974; ELECTRON-LETTERS; G.B.; DA. 1974; VOL. 10; NO 23; PP. 478-480; BIBL. 6 REF.Article

CAPACITANCE AND R-C TIME CONSTANT OF A NEARLY PINCHED-OFF SEMICONDUCTING CHANNEL IN THE HIGH-FREQUENCY REGIME.LEHOVEC K; ZAMANI N.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 11; PP. 673-675; BIBL. 6 REF.Article

THRESHOLD VOLTAGE SHIFT OF P-CHANNEL MOS-TRANSISTORS BY IMPLANTATION OF DONORS.RUNGE H.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 1; PP. 43-46; BIBL. 5 REF.Article

CASMOS - AN ACCURATE MOS MODEL WITH GEOMETRY-DEPENDENT PARAMETERS. IOAKLEY RE; HOCKING RJ.1981; IEE PROC., I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 6; PART. 1; PP. 239-247; BIBL. 9 REF.Article

ELECTRICALLY VARIABLE CHANNEL-LENGTH CHANGES IN MNOS TRANSISTORS.LONKY ML; TURLEY AP.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 3; PP. 162-164; BIBL. 6 REF.Article

MOBILITY PARAMETERS AND METAL-OXIDE-SEMICONDUCTOR-TRANSISTOR PROPERTIESMARTINOT H; ROSSEL P; VASSILIEFF G et al.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 24; PP. 599-600; BIBL. 11 REF.Serial Issue

COMPARISON BETWEEN TWO-DIMENSIONAL SHORT-CHANNEL MOSFET MODELSUMESH KUMAR.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 37-46; BIBL. 85 REF.Article

CHANNEL-COLLECTOR TRANSISTORSZIPPERIAN TE; WARNER RM JR; GRUNG BL et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 341-343; BIBL. 13 REF.Article

INVESTIGATION OF THE MOST CHANNEL CONDUCTANCE IN WEAK INVERSIONKOOMEN J.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 7; PP. 801-810; BIBL. 28 REF.Serial Issue

SIMPLE MODEL FOR THRESHOLD VOLTAGE OF A NONUNIFORMLY DOPED SHORT-CHANNEL MOS TRANSISTORASENOV AM.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 11; PP. 481-483; BIBL. 6 REF.Article

VERIFICATION OF THE EQUIVALENT CIRCUIT OF A CHANNEL-COLLECTOR TRANSISTOR BY TWO-DIMENSIONAL NUMERICAL SIMULATIONZIPPERIAN TE.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 344-346; BIBL. 12 REF.Article

A NEW METHOD TO ELECTRICALLY DETERMINE EFFECTIVE MOSFET CHANNEL WIDTHYING REN MA; WANG KL.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1825-1827; BIBL. 9 REF.Article

ELECTRICAL TESTING FOR PROCESS EVALUATIONSWADA Y; SUNAMI H; HASHIMOTO N et al.1981; MICROELECTRON. RELIAB.; ISSN 0026-2714; GBR; DA. 1981; VOL. 21; NO 2; PP. 159-163; BIBL. 10 REF.Article

N-CHANNEL SI-GATE PROCESS MNOS EEPROM TRANSISTORSJACOBS EP; SCHWABE U.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 517-522; BIBL. 17 REF.Article

A HIGH DENSITY CMOS INVERTER WITH STACKED TRANSISTORSCOLINGE JP; DEMOULIN E.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 10; PP. 150-251; BIBL. 10 REF.Article

UMOS TRANSISTORS (110) SILICONAMMAR ES; RODGERS TJ.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 907-914; BIBL. 16 REF.Article

A NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTHTERADA K; MUTA H.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 5; PP. 953-959; BIBL. 10 REF.Article

ELECTRICAL CHARACTERISTICS OF ¹¹B⁺-IMPLANTED P-CHANNEL MNOS TRANSISTORS.NAKAMURA K; KAMOSHIDA M.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 12; PP. 1085-1088; BIBL. 20 REF.Article

DISTRIBUTION DE LA MOBILITE DES PORTEURS DE CHARGE LE LONG DU CANAL DU TRANSISTOR A EFFET DE CHAMP A STRUCTURE MISDOBROVOL'SKIJ VN; ABESSONOVA LN.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 66-70; BIBL. 12 REF.Serial Issue

A ANALOG SYSTEM FOR MEASUREMENT OF EFFECTIVE SURFACE MOBILITY IN MOS DEVICESARMSTRONG WE; LIDKE JR.1973; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1973; VOL. 8; NO 2; PP. 180-182; BIBL. 10 REF.Serial Issue

THRESHOLD-VOLTAGE INSTABILITY OF N-CHANNEL MOSFET'S UNDER BIAS-TEMPERATURE AGINGSHIONO N; HASHIMOTO C.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 361-368; BIBL. 13 REF.Article